Produção Acadêmica

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Chart.
  1. TiO2 Nanotubes Production and Characterization; FRAGA, T. M.; ALBERTIN, K. F.; ALBERTIN, K. F.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; ECS Transactions, 49 (2012) 199 - 205
  2. Simulation of PECVD SiO2 Deposition Using a Cellular Automata Approach; COLOMBO, F. B.; CARRENO, M. N. P.; ECS Transactions, 49 (2012) 297 - 304
  3. A Cellular Automata Based Multi-Process Microfabrication Simulator; COLOMBO, F. B.; Carreo, M.N.P.; JICS. Journal of Integrated Circuits and Systems (Ed. Portugus), 6 (2011) 87 - 93
  4. Study of TiOxNy MOS Capacitors; ALBERTIN, K. F.; CRIADO, D.; A. Zuiga; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; ECS transactions, 31 (2010) 349 - 358
  5. Hollow core ARROW waveguides fabricated with SiOxNy films deposited at low temperatures; Gollub, A. H.; Carvalho, D. O.; Paiva, T. C.; Alayo, M. I.; Physica Status Solidi. C, Conferences and Critical Reviews, 7 (2010) 964 - 967
  6. a-SiC:H films deposited by PECVD for MEMS applications; PELEGRINI, M. V.;Pelegrini, Marcus V.; Rehder, Gustavo P.; Pereyra, Ins; physica status solidi (c), (2010) NA - NA
  7. Study of metal-oxide-semiconductor capacitors with r.f. magnetron sputtering TiO N films dielectric layer; Albertin, Katia Franklin; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; ALBERTIN, K. F.; Physica Status Solidi. C, Conferences and Critical Reviews, 7 (2010) 937 - 940
  8. Optimized-geometry ARROW waveguides using TiO2 as anti-resonant layer; Carvalho, D. O.; Albertin, K. F.; Alayo, M. I.; Physica Status Solidi. C, Conferences and Critical Reviews, 7 (2010) 716 - 719
  9. Study of phase separation and photo- luminescent emission in silicon nanostructured PECVD systems; RIBEIRO, Marcia; Ribeiro, M.; Pereyra, I.; physica status solidi (c), (2010) NA - NA
  10. Characterization of AlN films deposited by r.f. reactive sputtering aiming MEMS applications; Pelegrini, Marcus V.; Pereyra, Ins; physica status solidi (c), (2010) NA - NA
  11. PECVD Silicon Oxynitride as Insulator for MDMO-PPV Thin-Film Transistors; M.R. Cavalari; ALBERTIN, K. F.; G.Santos; C.R. Ramos; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; F.J. Fonseca; A.M. Andrade; JICS. Journal of Integrated Circuits and Systems (Ed. Portugus), 5 (2010) 116 - 124
  12. TiOxNy anti-resonant layer ARROW waveguides; Carvalho, D. O.; Albertin, K. F.; Alayo, M. I.; Physica Status Solidi. C, Conferences and Critical Reviews, 7 (2010) 960 - 963
  13. A study of metal contact properties on thermal annealed PECVD SiC thin films for MEMS applications; Oliveira, Alessandro R.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; CARREO, M. N. P.; Carreo, M.N.P.; physica status solidi (c), (2010) NA - NA
  14. Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiO[sub x] and TiO[sub x]N[sub y] gate dielectric layer; ALBERTIN, K. F.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures Processing, Measurement and Phenomena, 27 (2009) 236
  15. Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer; ALBERTIN, K. F.; PEREYRA, Ins; Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures Processing, Measurement and Phenomena, 27 (2009) 236 - 245
  16. Study of a-Si1-XCX: H Thin Films Obtained by PECVD in Temperatures Lower than 250 C Aiming Applications in Optics, Thin Films Devices on Polymeric Substrate and MEMS; PELEGRINI, M. V.;Pelegrini, Marcus V.; PEREYRA, I.; ECS transactions, 23 (2009) 127 - 134
  17. Development and Fabrication of an Optimized Thermo-Electro-Optic Device Using a Mach-Zehnder Interferometer; Mina, A. M.; Baez, H.; Martins, G. S. P.; Alayo, M. I.;Alayo, Marco I.; Journal of Non-Crystalline Solids, 354 (2008) 2565 - 2570
  18. Structural and morphological studies on SiOxNy thin films; CRIADO, D; ZUNIGA, A.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; Journal of Non-Crystalline Solids, 354 (2008) 2646 - 2651
  19. Improved effective charge density in MOS capacitors with PECVD SiOxNy dielectric layer obtained at low RF power; ALBERTIN, K; PEREYRA, I; ALBERTIN, K. F.; Journal of Non-Crystalline Solids, 354 (2008) 2646 - 2651
  20. MEMS-based incandescent microlamps for integrated optics applications; ALAYO, M.I.; REHDER, G.; Carreo, M.N.P.; Journal of Optics. A, Pure and Applied Optics, 10 (2008) 104022
  21. Tunable Bragg Filter Using Silicon Compound Films; Martins, G. S. P.; Carvalho, D. O.; Alayo, M. I.;Alayo, Marco I.; Journal of Non-Crystalline Solids, 354 (2008) 2816 - 2820
  22. 3D Simulation Software for Visualization of MEMS Microfabrication Processes.; TSUDA, F.; HOKAMA, P. M.; COLOMBO, F. B.; KAYATT, P. M.; KAYATT, P.; SOUZA, D. F.; JANKAUSKAS, R. G.; Carreo, M.N.P.;Carreno, M.N.P.;M.N.P. Carreno;CARREO, M.N.P.;CARRENO, M. N. P.; ECS Transactions, 14 (2008) 99 - 108
  23. Improved effective charge density in MOS Capacitors with PECVD SiOxNy dielectric layer obtained at low RF power; ALBERTIN, K.F.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; Journal of Non-Crystalline Solids, 354 (2008) 2646 - 2651
  24. Study of reactive sputtering titanium oxide for metal-oxide-semiconductor capacitors; ALBERTIN, K; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; ALBERTIN, K. F.; Thin Solid Films, (2008) 4548 - 4554
  25. Fabrication of Silicon Microtips with Integrated Electrodes; MIELLI, M.Z.; BARROS, A. de L.; LOPES, A. T.; Carreo, M.N.P.; CARREO, M. N. P.; JICS. Journal of Integrated Circuits and Systems, 3 (2008) 97 - 103
  26. Integration of optical waveguides with micro-incandescent light; REHDER, G.; ALAYO, M.I.; Carreno, M.N.P.; Journal of Non-Crystalline Solids, 354 (2008) 2538 - 2543
  27. a-SiC:H anti-resonant layer ARROW waveguides; Carvalho, D. O.; Alayo, M. I.; Journal of Optics. A, Pure and Applied Optics, 10 (2008) 104002
  28. Photoluminescence in silicon-rich PECVD silicon oxynitride alloys.; RIBEIRO, Marcia; Ribeiro, M.; PEREYRA, I; Journal of the Electrochemical Society, 14 (2008) 349 - 357
  29. PECVD a-SiC:H Young s Modulus Obtained by MEMS Resonant Frequency; REHDER, G.; Carreo, M.N.P.; Journal of Non-Crystalline Solids, 354 (2008) 2359 - 2364
  30. Al Thermal Diffusion in a-Si1-xCx:H Thin Film Studied by XAFS; PRADO, R. J.; FANTINI, M.C.A.; Carreo, M.N.P.; PEREYRA, I.; FLANK, A. M.; AIP Conference Proceedings, 882 (2007) 529 - 531
  31. ESTUDO DE FILMES DE a-Six-1 Cx: H OBTIDOS POR PECVD EM TEMPERATURAS ABAIXO DE 250C; PELEGRINI, M. V.;Pelegrini, Marcus V.; PEREYRA, I.; Boletim Tcnico da Faculdade de Tecnologia de So Paulo, dez-07 (2007) 45
  32. Study of MOS Capacitors With TiO2 and SiO2/TiO2 Gate Dielectric Layer; ALBERTIN, K. F.; VALLE, Marcio A; PEREYRA, Ins; Journal of Integrated Circuits and Systems, 2 (2007) 89 - 93
  33. Correlation of PECVD SiOxNy dielectric layer structural properties and Si/SiOxNy/Al capacitors interface electrical properties; ALBERTIN, K.F.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; Journal of Non-Crystalline Solids, 352 (2006) 1438 - 1443
  34. Post thermal annealing crystallization and reactive ion etching of SiC films produced by PECVD; OLIVEIRA, A.R.; Carreo, M.N.P.; Journal of Non-Crystalline Solids, 352 (2006) 1392 - 1397
  35. Amorphous and excimer laser annealed SiC films for TFT fabrication; GARCIA, B; ESTRADA, M; ALBERTIN, K; CARRENO, M; PEREYRA, I; RESENDIZ, L; ALBERTIN, K. F.; Solid-State Electronics, 50 (2006) 241 - 247
  36. Ciliary Motion in PECVD Silicon Carbide Microstructures; REHDER, G.; Carreo, M.N.P.; Revista Mexicana de Fisica, 52 (2006) 48 - 49
  37. Local bonding in PECVD-SiOxNy films; SOUZA, D. C. P.; ALAYO, M.I.; FANTINI, M.C.A.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; Journal of Non-Crystalline Solids, 352 (2006) 1298 - 1302
  38. Thermally actuated a-SiC:H MEMS fabricated by a PECVD process; REHDER, G.; Carreo, M.N.P.; Journal of Non-Crystalline Solids, 352 (2006) 1822 - 1828
  39. Study of the mechanical and structural properties of silicon oxynitride films for optical applications; SOUZA, D. C. P.; ALAYO, M.I.; FANTINI, M.C.A.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; Journal of Non-Crystalline Solids, 352 (2006) 2319 - 2323
  40. N and p-type doping of PECVD a-SiC:H obtained under starving plasma condition with and without hydrogen dilution; OLIVEIRA, A.R.; Carreo, M.N.P.; Materials Science and Engineering. B, Solid State Materials for Advanced Technology, 128 (2006) 44 - 49
  41. N and p-type doping of stoichiometric PECVD a-SiC:H exhibiting high structural and chemical order; OLIVEIRA, A. R.; CARREO, M. N. P.; Materials Science and Engineering. B, Solid State Materials for Advanced Technology, 128 (2006) 44 - 49
  42. Characterization of Si1-xCx:H thin films deposited by PECVD for SiCOI heterojuntion fabrication; Forhan, Neisy A. E.; Fantini, Mrcia C. A.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; Journal of the Brazilian Chemical Society, 17 (2006) 1158
  43. One step a-Si:H TFTs with PECVD SiOxNy gate insulator; ALBERTIN, K. F.; PEREYRA, Ins; Revista Mexicana de Fisica, 52 (2006) 83 - 85
  44. A first principles investigation on hypothetical crystalline phases of silicon oxycarbide; DA SILVA, C.R.S.; JUSTO, J.F.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; ASSALI, L. V. C.; Diamond and Related Materials, 14 (2005) 1142
  45. Modification of electrode materials for plasma torches; JANKOV, I.R.; SZENTE, R N; GOLDMAN, I.D.; Carreo, M.N.P.; VALLE, M de A; BEHAR, M; COSTA, C A R; GALEMBECK, F.; LANDERS, R; Surface and Coatings Technology, 200 (2005) 254 - 257
  46. Study of PECVD SiOxNy films dielectric properties with different nitrogen concentration utilizing MOS; ALBERTIN, K.F.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; Microelectronic Engineering, 77 (2005) 144 - 149
  47. Study of PECVD SiON films dielectric properties with different nitrogen concentration utilizing MOS capacitors; ALBERTIN, K; PEREYRA, I; ALBERTIN, K. F.; Microelectronic Engineering, 77 (2005) 144 - 149
  48. Self-Sustained Bridges of a-SiC:H films obtained by PECVD at low temperatures for MEMS applications; Carreo, M.N.P.; LOPES, A. T.; Journal of Non-Crystalline Solids, 338 (2004) 490 - 495
  49. Amorphous hydrogenated carbon-nitride films prepared by RF-PECVD in methane-nitrogen atmospheres; MOTTA, E.F.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; Journal of Non-Crystalline Solids, 338-40 (2004) 525 - 529
  50. Evidence of clusters size-dependent photoluminescence on silicon-rich silicon oxynitride films; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; FANTINI, M.C.A.; ALAYO, M.I.; OLIVEIRA, R.A.R.; RIBEIRO, M.; SCOPEL, W.L.; Materials Science and Engineering. B, Solid State Materials for Advanced Technology, 112 (2004) 116 - 119
  51. Hydrogen effusion from highly-ordered near-stoichiometric a-SiC:H; CAMARGO, S. S.; Carreo, M.N.P.; PEREYRA, I.; Journal of Non-Crystalline Solids, 338 (2004) 70 - 75
  52. Deposition and characterization of silicon oxynitride for integrated optical applications; ALAYO, M.I.; CRIADO, D; GONCALVES, L.C.D.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; Journal of Non-Crystalline Solids, 338-40 (2004) 76 - 80
  53. Crystalline silicon oxycarbide: Is there a native oxide for silicon carbide?; DA SILVA, C.R.S.; JUSTO, J.F.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; Applied Physics Letters, 84 (2004) 4845 - 4847
  54. In-situ and Ion Implantation Nitrogen doping on near stoichiometric a-SiC:H films; OLIVEIRA, A.R.; Carreo, M.N.P.; JICS. Journal of Integrated Circuits and Systems, 1 (2004) 26
  55. Structural analysis of silicon oxynitride films deposited by PECVD; CRIADO, D; ALAYO, M.I.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; FANTINI, M.C.A.; Materials Science and Engineering. B, Solid State Materials for Advanced Technology, 112 (2004) 123 - 127
  56. Evidence of clusters size-dependent photoluminescence on silicon-rich oxynitride films; RIBEIRO, Marcia; Ribeiro, M.; PEREYRA, I; ALAYO, M I; Materials Science and Engineering. B, Solid State Materials for Advanced Technology, 112 (2004) 116 - 119
  57. Membranes of SiOxNy with 3D topography for MEMS application and obtained by PECVD; LOPES, A. T.; Carreo, M.N.P.; Journal of Non-Crystalline Solids, 338 (2004) 788 - 792
  58. Nano-crystalline Si1-xCx:H thin films deposited by PECVD for SiC-on insulator application; FORHAN, N.A.E.; FANTINI, M.C.A.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; Journal of Non-Crystalline Solids, 338-40 (2004) 119 - 122
  59. Structural and electrical properties of low-temperature PECVD SiC/c-Si heterostructures; OLIVEIRA, A.R.; PEREYRA, I.; Carreo, M.N.P.; Materials Science and Engineering. B, Solid State Materials for Advanced Technology, 112 (2004) 144 - 146
  60. Fabrication of PECVD-silicon oxynitride-based optical waveguides; ALAYO, M.I.; CRIADO, D; CARRENO, M.N.P.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; Materials Science and Engineering. B, Solid State Materials for Advanced Technology, 112 (2004) 154 - 159
  61. Structural Investigation of Si-Rich Amorphous Silicon Oxynitride Films; SCOPEL, W.L.; FANTINI, M.C.A.; ALAYO, M.I.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; Thin Solid Films, 425 (2003) 275 - 281
  62. Theoretical and experimental studies of the atomic structure of oxygen-rich amorphous silicon oxynitride films; SCOPEL, W.L.; DA SILVA, A.J.R.; ORELLANA, W; PRADO, R.J.; FANTINI, M.C.A.; FAZZIO, A.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; Physical Review B - Solid State, 68 (2003)
  63. SILICON CLUSTERS IN PECVD SILICON RICH SIOxNy; RIBEIRO, Marcia; Ribeiro, M.; PEREYRA, I; ALAYO, Mi; Materials Characterization, 50 (2003) 161 - 166
  64. Difficulties in Predicting the Surface Concentration of Implanted Ions; Carreo, M.N.P.; JANKOV, I.R.; SZENTE, R N; GALEMBECK, F.; GOLDMAN, I.D.; VALLE, M de A; BEHAR, M; LANDERS, R; Acta Microscpica, 12 (2003)
  65. Study of nitrogen-rich silicon oxynitride films; CRIADO, D; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; ALAYO, M.I.; Thin Solid Films, 425 (2003) 275 - 281
  66. MOS capacitors with PECVD SiOxNy insulating layer; ALBERTIN, K.F.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; ALAYO, M.I.; Materials Characterization, 50 (2003) 149 - 154
  67. Silicon Rich Silicon Oxynitride Films for Photoluminescence Applications; RIBEIRO, M.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; ALAYO, M.I.; Thin Solid Films, 426 (2003) 200 - 204
  68. Study of nitrogen-rich Silicon Oxynitride Films Obtained by PECVD; Criado, D.; Pereyra, I.; Alayo, M. I.;Alayo, Marco I.; Materials Characterization, 50 (2003) 167 - 171
  69. Annealing effects of highly homogeneous a-Si1-xCx:H; PRADO, R.J.; D'ADDIO, T.F.; FANTINI, M.C.A.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; FLANK, A. M.; Journal of Non-Crystalline Solids, 330 (2003) 196 - 215
  70. Silicon clusters in PECVD silicon-rich SiOxNy; OLIVEIRA, R.A.R.; RIBEIRO, M.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; ALAYO, M.I.; Materials Characterization, 50 (2003) 161 - 166
  71. Preparation and Characterization of Nanocrystalline h-BN prepared by PECVD Method; LPEZ, J. V.; CARRENO, M.N.P.; PEREYRA, I.; CRUZ, N. C.; RANGEL, E. C.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; Brazilian Journal of Physics, 32 (2002) 372 - 375
  72. On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PECVD) SiOxNy films; Alayo, M. I.;Alayo, Marco I.; Pereyra, I.; Scopel, W. L.; Fantini, M.C.A.; Thin Solid Films, 402 (2002) 154 - 161
  73. On the nitrogen and oxygen incorporation in plasma-enhancsd chemical vapor deposition (PECVD) SiOxNy films.; ALAYO, M.I.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; SCOPEL, W.L.; FANTINI, M.C.A.; Thin Solid Films, 402 (2002) 154 - 161
  74. Local Structure and Bonds of Amorphous Silicon Oxynitride Thin Films; SCOPEL, W.L.; FANTINI, M.C.A.; ALAYO, M.I.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; Thin Solid Films, 413 (2002) 59 - 64
  75. Local Order Structure of a-SiOxNy:H Grown by PECVD; SCOPEL, W.L.; FANTINI, M.C.A.; ALAYO, M.I.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; Brazilian Journal of Physics, 32 (2002) 366 - 368
  76. PECVD-SiOxNy Films for Large Area Self-Sustained Grids Applications; Carreo, M. N. P.; Alayo, M. I.;Alayo, Marco I.; Pereyra, I.; Lopes, A. T.; Sensors and Actuators. A, Physical, 100 (2002) 295 - 300
  77. Chemical and Morphological Properties of Amorphous Silicon Oxynitride Films deposited by Plasma Enhanced Chemical Vapor Deposition; Scopel, W. L.; Cuzinatto, R. R.; Tabacniks, M. H.; Fantini, M. C. A.; Alayo, M. I.;Alayo, Marco I.; Pereyra, I.; Journal of Non-Crystalline Solids, 288 (2001) 88 - 95
  78. Wide optical bandgap window layer for Solar Cells; YU, Z.; PEREYRA, I.; Carreo, M.N.P.; Solar Energy Materials and Solar Cells, 66 (2001) 155 - 162
  79. Structural and morphological investigation of amorphous hydrogenated silicon carbide; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; PRADO, R.J.; FANTINI, M.C.A.; ODO, G. Y.; LEPIENSKI, C. M.; J Appl Crystallography, 34 (2001) 465 - 472
  80. Sample Preparation Method for Scanning Force Microcopy; JANKOV, I.R.; SZENTE, R N; GOLDMAN, I.D.; Carreo, M.N.P.; SWART, J.W.; LANDERS, R.; Brazilian Journal of Physics, 31 (2001) 552 - 561
  81. Chemical and morphological properties of amorphous silicon oxynitride films deposited by plasma chemical vapor deposition ; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; SCOPEL, W.L.; FANTINI, M.C.A.; TABACKNICS, M. R.; ALAYO, M.I.; Journal Of Non Crystalline Solids, 288 (2001) 88 - 99
  82. Mechanical and Thermophysical Properties of PECVD Oxynitride Films Measured by MEMS; Guimares, M. S.; Sinatora, A.; Alayo, M. I.;Alayo, Marco I.; Pereyra, I.; Carreo, M. N. P.; Thin Solid Films, 398 (2001) 626 - 631
  83. Optimization of the i-layer width of Cr-a-Si : H PIN X-ray detectors; ESTRADA, M.; CERDEIRA, A.; LEYVA, A.; Carreo, M.N.P.; PEREYRA, I.; Thin Solid Films, 396 (2001) 235 - 239
  84. Iprovements on the local order of amorphous hydrogenated silicon carbide films; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; PRADO, R.J.; VILLACORTA, C. A.; FLANK, A. M.; FANTINI, M.C.A.; J Non Cryst Sol, 283 (2001) 1 - 10
  85. Highly ordered amorphous Silicon-Carbon Alloys obtained by rf PECVD; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; CARRENO, M.N.P.; VILLACORTA, C. A.; PRADO, R.J.; FANTINI, M.C.A.; Brazilian Journal of Physics, 30 (2000) 533 - 540
  86. High deposition rate a-Si:H layers from pure SiH4 and from 10% dilution of SiH4; ESTRADA, M.; CARRENO, M.N.P.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; SOTO, S.; Thin Solid Films, (2000)
  87. P-type doping in a-Si1-xCx:H obtained by PECVD; Carreo, M.N.P.; PEREYRA, I.; Journal of Non-Crystalline Solids, 266 (2000) 699 - 703
  88. Caracteristics of high deposition rate PIN diodes from pure SiH4 and 10 % dissolution of SiH4 in H2; ESTRADA, M.; CERDEIRA, A.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; SOTO, S.; Ieee Trans Nuc Sci, 47 (2000) 176 - 179
  89. Mechanical properties of boron nitride thin films obtained by rf-pecvd at low temperatures; VILCARROMERO, J.; Carreo, M.N.P.; PEREYRA, I.; Thin Solid Films, 373 (2000) 273 - 276
  90. Observation of Negative Differential Resistance in mc-Si:H/a-Si1-xCx:H Double Barrier Devices; YU, Z.; PEREYRA, I.; Carreo, M.N.P.; Japanese Journal of Applied Physics, 38 (1999) 1317 - 1319
  91. P-I-N diodes on high deposition rate thick a-Si:H layers from pure SiH4 and from 10% dilution of SiH4,; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; ESTRADA, M.; Thin Solid Films, 346 (1999) 255 - 260
  92. Filmes pticos polimricos fluorados com ndice de refrao gradual; BARTOLI, J.R.; Carreo, M.N.P.; MANSANO, R.D.; VERDONCK, Patrick Bernard; COSTA, R A da; Polmeros, Out (1999) 148 - 155
  93. Thick SiOxNy and SiO2 Films Obtained by PECVD Technique at Low Temperatures; ALAYO, M.I.; PEREYRA, I.; Carreo, M.N.P.; Thin Solid Films, 332 (1998) 40 - 45
  94. N-Type doping in PECVD a-Si1-xCx:H obtained under Starving Plasma condition; CARRENO, M.N.P.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; PERES, H. E. M.; Journal of Non-Crystalline Solids, (1998) 483 - 487
  95. P-I-N Diodes on high deposition rate thick a-Si:H layers from pure SiH4; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; ESTRADA, M.; Thin Solid Films, (1998)
  96. The Influence of staving plasma regime on carbon content and bond in a-Si1-xCx:H; PEREYRA, I.; Carreo, M.N.P.; PRADO, R. J.; BITTENCOURT, D. R. S.; TABACKNICS, M. H.; FANTINI, M. C. A.; Journal of Applied Physics, 38 (1998) 2371 - 2379
  97. Doping Efficiency in Highly Ordered PECVD a-Si1-xCx:H; CARRENO, M.N.P.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; Brazilian Journal of Physics, 27/A (1997) 166 - 169
  98. Improvement of the Structural Properties of Near Stoichiometric PECVD SiO2; Alayo, M. I.;Alayo, Marco I.; Pereyra, I.; Brazilian Journal of Physics, 27/A (1997) 146 - 149
  99. Intrinsic and Doped Microcrystalline Silicon Films for Application in Double Barrier Structures; YU, Z.; CARRENO, M.N.P.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; D'ADDIO, T.F.; FANTINI, M.C.A.; Brazilian Journal of Physics, 27(A) (1997) 105 - 109
  100. Distribution of pores in a-Si 1-x C :H thin films; PRADO, R.J.; BITTENCOURT, D. R. S.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; TABACKNICS, M. R.; FANTINI, M.C.A.; CARRENO, M.N.P.; Journal of Applied Crystallography, 30 (1997) 659 - 663
  101. The Carbon Incorporation in PECVD a-Si1-xCx:H in the Low power Density Regime; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; CARRENO, M.N.P.; TABACKNICS, M. R.; PRADO, R.J.; FANTINI, M.C.A.; Brazilian Journal of Physics, 27/A (1997) 150 - 153
  102. Low Temperature PECVD Boron Nitride; CARRENO, M.N.P.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; BOTTECHIA, J. P.; Thin Solid Films, 308 (1997) 219 - 222
  103. Wide Gap a Si1-xCx:H thin Films Obtained under Starving Plasma Deposition Conditions; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; CARRENO, M.N.P.; Journal of Non-Crystalline Solids, 201 (1996) 110 - 118
  104. On the Structural Properties of a-SiC:H thin films; MASTELARO, V.; FLANK, A. M.; FANTINI, M.C.A.; BITTENCOURT, D. R. S.; CARRENO, M.N.P.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; Journal of Applied Bacteriology, 79 (1996) 1324
  105. High Quality Low Temperature Dpecvd Silicon Dioxide; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; ALAYO, M.I.; Thin Solid Films, 212 (1996) 225 - 231
  106. Microvoids in Diamond Like Amorphous Silicon Carbide; CARRENO, M.N.P.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; FANTINI, M.C.A.; TAKAHASHI, H.; LANDERS, R.; Journal of Applied Physics, 75 (1994) 538
  107. Effect of plasma Etching, Carbon Concentration and Buffer Layer on the Properties of a-Si:/H/a-SiC:H Multi Layers; VELASQUEZ, E. L. Z.; FANTINI, M.C.A.; CARRENO, M.N.P.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; TAKAHASHI, H.; LANDERS, R.; Journal of Applied Physics, 75 (1994) 543
  108. Photocurrent Oscillations in a-SiC:H Double Barrier Devices Exhibiting Negative Differential Resistance; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; CARRENO, M.N.P.; Springer Proceedings In Physics, 62 (1992) 387
  109. X-Ray Reflectivity of Amorphous Multyi Layers: Interface Modeling; FANTINI, M.C.A.; SANTOS, P. V.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; CARRENO, M.N.P.; 5th Brazilian School On Semiconductor Physics, (1992) 225
  110. TFTs With an a-SiCx:H Insulator Layer; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; CARRENO, M.N.P.; ANDRADE, A. M.; Springer Proceedings In Physics, 62 (1992) 387
  111. Transistores de filme fino de a-Si:H/a-SiC:H ; KOMAZAWA, A.; CARRENO, M.N.P.; ANDRADE, A. M.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; Revista Brasileira de Aplicaes de Vcuo, (1989)
  112. Negative Resistance in a-SiCx:H Double Barrier Devices - Frequency Dependence; CARRENO, M.N.P.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; KOMAZAWA, A.; SASSAKI, C. A.; ARASAKI, A. T.; Journal of Non-Crystalline Solids, 114 (1989) 762
  113. Negative Conductance and Sequential Tunelling in Amorphous Silicon-Silicon Carbide Double Barrier Devices; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; CARRENO, M.N.P.; ALVAREZ, F.; Journal of Non-Crystalline Solids, 110 (1989) 175
  114. Density of Gap States in Non-Stoichiometric a-SiCx:H Films; ONMORI, R. K.; RAMOS, C. A. S.; CARRENO, M.N.P.; ANDRADE, A. M.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; Thin Films And Small Particles, 11 (1989) 298
  115. Um sensor de imagem bsico em silcio amorfo; ARASAKI, A. T.; SASSAKI, C. A.; CARRENO, M.N.P.; KOMAZAWA, A.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; Revista Brasileira de Aplicaes de Vcuo, (1989)
  116. Integral Thin Film Technology Amorphous Silicon Image Sensor; SASSAKI, C. A.; ARASAKI, A. T.; CARRENO, M.N.P.; KOMAZAWA, A.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; Journal of Non-Crystalline Solids, 115 (1989) 90
  117. Evidence of quantum size effects in a-Si:H/a-SiC:H Superlattices. Observation of negative resistance in double barrier structures; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; CARRENO, M.N.P.; ONMORI, R. K.; SASSAKI, C. A.; ANDRADE, A. M.; ALVAREZ, F.; Journal of Non-Crystalline Solids, 97-98 (1987) 871 - 874
  118. Evidence of Quantum Size effects in a-Si:H/a-SiCx:H Superlattices. Observation of Negative Resistance in Double Barrier Structures.; PEREYRA, I.; Carreo, M.N.P.; ONMORI, R. K.; SASSAKI, C. A.; ANDRADE, A. M.; ALVAREZ, F.; Journal of Non-Crystalline Solids, 97-98 (1987) 871 - 874
  119. Optical properties of off-Stoichiometric Germanium Nitride Compounds 'a-Ge1-xNx'; CISNEROS, J.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; MOEHLECKE, S.; LOSCH, W.; Journal of Non-Crystalline Solids, (1985) 0 - 0
  120. Highly Uniform Large Area A-Si: H Films; SANEMATSU, M. S.; PEREYRA, I.;Pereyra, Ins;Pereyra, In s; ANDRADE, A. M.; MARTINS, R. F. P.; SOLAR CELLS, 14 (1985) 281 - 287

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